Byoung Hun Lee

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A relative contribution of the interface and bulk dielectric defects to negative bias temperature instability (NBTI) in the metal/HfO<sub>2</sub>/SiO<sub>2</sub> gate stacks was investigated.(More)
The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities(More)