Byoung Deog Choi

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The college of Information and Communication Engineering covers electrical, electronic and computer engineering which play a pivotal role in today's global industry. The broad, interrelated research fields of the college of Information and Communication Engineering include electrical energy systems, control measuring and automation telecommunication and(More)
We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In(1-x)Ga(x))Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (E(a)) deduced from I-V(More)
In this work, we demonstrate that expanded graphite can be sufficiently dispersed in polymer solution to form suspensions. Thin composite films were prepared by casting and drying the suspensions. The thermoelectric properties of expanded graphite (ExG)-polymer composites were easily modified by chemical doping. Electrically and thermally insulating(More)
a r t i c l e i n f o a b s t r a c t A new fast algorithm for the computation of the normalized cross-correlation (NCC) is presented. For a search window of size M and a template of size N, our fast NCC requires only approximately 3N ·(M − N +1) additions/subtractions without multiplications. Numerical results with 100,000 test signals show that the use of(More)
In this study, we prepared solution-based In-Ga-ZnO thin film transistors (IGZO TFTs) having a multistacked active layer. The solution was prepared using an In:Zn = 1:1 mole ratio with variation in Ga content, and the TFTs were fabricated by stacking layers from the prepared solutions. After we measured the mobility of each stacked layer, the saturation(More)
In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A(More)
In this paper, we report the effects of O2-plasma treatment on the reliability and electrical properties of indium tin zinc oxide (ITZO) films. Excellent electrical properties, including a saturation mobility (μsat) of ~20.2 cm2/V · s, a threshold voltage (VTH) of ~-6.8 V, a sub-threshold swing (S.S) of ~0.956 V/decade, and an on/off current ratio (ION/OFF)(More)
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