We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
Power SOI (Silicon-On-Insulator) devices have an inherent sandwich structure of MOS (Metal-Oxide-Semiconductor) gate which is very easy to suffer ESD (Electro-Static Discharge) overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT(More)
  • 1