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Ultrahigh vacuum scanning tunneling microscopy (STM) is used to characterize the surface morphology of TiN(001) epitaxial layers grown by dc reactive magnetron sputtering at growth temperatures of… (More)
The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission… (More)
Abstract The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. We use the… (More)
Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating… (More)
A low‐energy, high‐brightness, broad beam Cu ion source is used to study the effects of self‐ion energy Ei on the deposition of epitaxial Cu films in ultrahigh vacuum. Atomically flat Ge(001) and… (More)