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Journals and Conferences
A 20-GHz low-noise amplifier (LNA) with an active balun fabricated in a 0.25-/spl mu/m SiGe BICMOS (f/sub t/=47 GHz) technology was presented by the authors in 2004. The LNA achieves close to 7 dB of… (More)
We review a technology platform that enables monolithic integration of optical and electronic circuits in a mainstream CMOS process and demonstrate a grating coupler with 0.75 dB insertion loss.
We have demonstrated a CMOS Optoelectronic technology platform, using a 650mW 4×10-Gb/s 0.13 μm silicon-on-insulator integrated transceiver chip, co-packaged with an externally modulated laser, to… (More)
We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional… (More)
We report on the demonstration of an integrated 4×25 Gb/s parallel optical transceiver built in Luxtera's CMOS photonics platform, and discuss how we can scale this platform to even higher data rates.
In this contribution the CMOS photonics technology (LuxG) developed and commercialized by Luxtera is reviewed. The advantages of integration and usage of a standard CMOS foundry… (More)
The advantages of CMOS photonics for next generation transceiver applications are outlined in terms of raw bandwidth, channel capacity, reach, power, cost, link performance and reliability. The… (More)
For the first time we demonstrate a fully self-contained photonic transceiver system on a single die with monolithically integrated Ge photo-detectors. The transceiver allows error-free bidirectional… (More)
We have demonstrated a 40-Gb/s optoelectronic transceiver in a quad small form-factor pluggable (QSFP) module. Each module includes a 4xlO-Gb/s, 0.13 μm CMOS silicon-on-insulator integrated… (More)
CMOS integration methodologies, design and performance of advanced silicon photonics ICs are highlighted. The roadmap towards low power and high density optical interconnect as well as close… (More)