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  • Ping Shi, Jack Harrison Enloe, R. van den Boom, Brian C. Sapp
  • Materials Science
  • IEEE International Interconnect Technology…
  • 2012 (First Published: 1 June 2012)
  • Direct plating of Cu on Ru for dual damascene and high aspect ratio through-silicon via (TSV) structures requires high nucleation density and rapid coalescence of the Cu nuclei, which may be achievedContinue Reading
  • Sunoo Kim, Seth Kruger, Brian C. Sapp, Ho Hyung Lee, Seungbae Park, S. Arkalgud
  • Materials Science
  • IEEE 63rd Electronic Components and Technology…
  • 2013 (First Published: 1 May 2013)
  • This work describes a methodology and a test structure to evaluate next generation pre-applied underfill materials with concurrent flux capability for ultra-fine pitch solder-based interconnects.Continue Reading