Brian C Sapp

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A comprehensive study of reliability failure modes in an advanced through-silicon via (TSV) mid process flow is presented in Part I of this paper. This is the first time unique TSV mid reliability failure modes at leading-edge TSV dimensions have been observed and reported. TSV Kelvin, comb and chain test structures with 10:1 aspect ratio and a TSV diameter(More)
Cu-Cu direct bonding is the leading method for fine pitch (10 μm) chip-to-chip interconnects. We performed several measurements on blanket Cu film samples in an effort to determine the impact of the Cu film properties on wafer-to-wafer Cu-Cu direct bonding. X-ray photoelectron spectroscopy (XPS) measurements were performed on uncleaned and cleaned(More)
Through-silicon via (TSV)-based 3D packaging technologies require processing and handling of silicon wafers thinned to 50 μm and below. A number of manufacturing challenges exist for these processes. When wafers are this thin, an external means of mechanical support is always required. This support may be provided from specially designed chucks,(More)
Direct plating of Cu on Ru for dual damascene and high aspect ratio through-silicon via (TSV) structures requires high nucleation density and rapid coalescence of the Cu nuclei, which may be achieved by incorporating strong suppressors in the plating solution. Atotech Spherolyte plating chemistry, containing a unique strong suppressor, is able to generate a(More)
In this paper, physical and electrical results of full wafer direct Cu plating of 2×40 μm TSVs with thin Ru seed are presented. Physical vapor deposition of about 100 nm Cu in the field is shown to improve plating non-uniformity across the structured wafer. TSV plating using Atotech's TSV III chemistry results in bottom-up growth with strong(More)
We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical reactivity, cost, environmental, safety and health aspects(More)
A low-cost, manufacturable, thermally actuated, plastic microfluidic valve has been developed. The valve contains an encapsulated, temperature-sensitive fluid, which expands, deflecting a thin elastomeric film into a fluidic channel to control fluid flow. The power input for thermal expansion of each microfluidic valve can be controlled using a printed(More)
This work describes a methodology and a test structure to evaluate next generation pre-applied underfill materials with concurrent flux capability for ultra-fine pitch solder-based interconnects. This simple test vehicle consists of Sn-solder micro-bumps with diameters less than 10 μm. The micro-bumps reflowed to form spherical balls when heated in(More)
A study using a vapor deposited polyimide (VDP) dielectric liner to electrically isolate through-silicon vias (TSVs) has demonstrated electrical and thermo-mechanical performance superior to sub-atmospheric chemically vapor deposited (SACVD) tetraethyl orthosilicate (TEOS) liner in 5 μm × 50 μm TSVs. The VDP liner is continuous and(More)
In this paper, the method of space alternated phase shift (SAPS) megasonic technology is applied for post-etch (Bosch) TSV wafers cleaning process. The SAPS technology provides uniform sonic energy on each point of entire wafer by alternating phase of megasonic wave in the gap between a megasonic device and the wafer. For this study, 5×50 μm(More)