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Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells
Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescenceExpand
Ceramic materials in renewable energy: a module developed for hands-on learning
Authors: Matthew Musselman, Nooraldeen Alkurd, Brett Ley, Xena Murugappan, Jacob Feldman, Corinne E. Packard Date of creation: June 2017 Publisher: Colorado School of Mines How to Cite: M. Musselman,Expand
GaAs Solar Cells with High Carrier Collection Grown on Unpolished, Spalled Ge Substrates: Preprint
Decreasing the cost of single-crystal substrates has long been sought for III-V solar cells. Controlled spalling is a possible pathway for epitaxial liftoff, which would help reduce costs, butExpand
GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates
We spalled 2-inch Ge wafers using a Ni stressor layer and grew GaAs solar cells by hydride vapor phase epitaxy on the spalled Ge surface without other surface treatments. The controlled spallingExpand