Brenda Ss Cheng

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0038-1101/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.sse.2009.03.008 * Corresponding author. E-mail addresses: (B. C (S. Roy), (A.R. Brown), A.Aseno The quantitative evaluation of the impact of key sources of static and dynamic statistical variability (SV) are presented for LSTP nMOSFETs corresponding(More)
The present study was undertaken to evaluate the long-term health-related quality of life (HRQOL) as well as the employment status in survivors of severe sepsis up to 6 years afterwards. From January 2003 to December 2008 a total of 112 severe sepsis and 112 age, gender and Charlson comorbidity index-matched non-septic critically ill patients from 4(More)
The Beijing Spectrometer (BES) p ex eriment has observed purely leptonic decays of the D, meson in the reaction e+e+ D$D; at a c.m. energy of 4.03 GeV. Three events are observed in which one D, decays hadronically to +r, li*“K, or K”li, and the other decays leptonically to ova or l-v,. With the assumption of p-r universality, values of the branching(More)
Thermal and electrical transport in FinFET with statistical variations is investigated by 3D coupled electro-thermal simulation, using statistical-variability-aware device simulator GARAND with built-in thermal simulation module. The module employs a new formula for the calculation of the thermal conductivity in the fin region with fin shape dependence. An(More)
Intrinsic parameter fluctuations steadily increase with CMOS technology scaling. Around the 65 nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Device mismatch due to intrinsic parameter fluctuation causes each memory cell of the millions in a typical memory array to have(More)
To screen possible biomarkers in whole saliva from oral lichen planus (OLP) patients by proteomic techniques. Two-dimensional electrophoresis and matrix-assisted laser desorption/ionization time-of-flight mass spectrometry were applied to whole saliva of OLP patients and controls, and the differential protein components were analyzed with peptide mass(More)
This paper presents a principal component analysis (PCA)-based unified compact modelling strategy for process-induced and statistical variability in 14-nm double gate SOI FinFET technology. There is strong interplay between process and statistical variability in FinFET technology and failure to capture the correlations between them can lead to an inaccurate(More)
Statistical variability is a major challenge for CMOS scaling and integration. In order to achieve variability aware design, it’s critical important to reliably transfer device characteristics statistical variability information into compact models. A PCA based statistical compact modeling strategy is benchmarked against ‘atomistic’ device simulation and(More)