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Phase-locking in double-point-contact spin-transfer devices

• F. B. Mancoff, N. D. Rizzo, Brad N. Engel, S. Tehrani
• Nature
• 2005

Spin-transfer in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments… (More)

The Science and Technology of Magnetoresistive Tunneling Memory

• Brad N. Engel, N. D. Rizzo, +5 authors S. Tehrani
• 2001

Rapid advances in portable communication and computing systems are creating an increasing demand for nonvolatile random access memory that is both high-density and highspeed. Existing solid-state… (More)

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