Brad D. Gaynor

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— Bulk FinFETs have emerged as the solution to short-channel effects at the 22-nm technology node and beyond. The capability of 3-D stacking of dies from various technologies will eventually enable stacking FinFET dies within 3-D integrated circuits. Within 3-D circuits, through silicon vias (TSVs) are a known source of substrate noise in planar bulk(More)
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