Brad D. Gaynor

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FinFETs have emerged as the solution to short channel effects at the 22-nm technology node and beyond. Previously, there have been few studies on the impact of fin cross section shape on transistor leakage. We show for the first time that fin shape significantly impacts transistor leakage in bulk tri-gate nFinFETs with thin fins when the fin body doping(More)
Bulk FinFETs have emerged as the solution to short-channel effects at the 22-nm technology node and beyond. The capability of 3-D stacking of dies from various technologies will eventually enable stacking FinFET dies within 3-D integrated circuits. Within 3-D circuits, through silicon vias (TSVs) are a known source of substrate noise in planar bulk(More)
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