Boualem Djezzar

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We propose a model for the so-called constant-amplitude charge-pumping (CP) characteristics, giving the Elliot Gaussian-like CP current curve (I<sub>CP</sub>-V<sub>L</sub>) of lightly doped drain (LDD) MOSFET with local oxidation of silicon (LOCOS). This method is based on modulation of the contributing active-channel area (A<sub>G</sub>) to the(More)
Article history: Received 4 June 2012 Received in revised form 26 November 2012 Accepted 3 December 2012 Available online xxxx 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.12.001 ⇑ Corresponding author. Tel.: +213 (0) 21 35 10 40 E-mail addresses: htahi@cdta.dz, hakimtahi@yahoo Please cite this article in press(More)
This paper proposes a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub 01/), called OTCP (Oxide-Trap based on Charge-Pumping). In the OTCP method, we use a High Frequency (HF) standard charge-pumping measurement. By applying a HF gate voltage signal, we avoid the border-trap effect in CP current (I/sub cp/) measurements.(More)
In this paper, we develop a semianalytical model that predicts the geometric component in charge-pumping (CP) measurements for local oxidation of silicon (LOCOS) and lightly doped drain (LDD) transistors. It is not only based on thermal diffusion, drift field, and self-induced drift field but also on the contribution of the active CP area and the low-level(More)
In this paper, a thorough investigation of the application possibilities of the oxide-trap charge-pumping (OTCP) extraction method to evaluate the radiation-induced traps in short lightly doped drain (LDD) transistors is conducted. We have successfully demonstrated that the OTCP is able to determine all kind of traps induced by radiation in short LDD(More)
In this paper, we have presented a new methodology to take out the local oxidation of silicon (LOCOS) and lightly doped drain (LDD) subdiffusion effects from charge-pumping (CP) curves, leaving only the CP current of the effective channel, in narrow- and short-channel MOSFET transistors. First, we have clarified the contribution of LDD-subdiffusion and(More)
In this paper, we propose a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub ot/), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP(More)
We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping) method from high frequencies (HF) to low frequencies (LF). Thus, using the LF-OTCP method, the interface-trap and border-trap (switching oxide trap) are simultaneously involved in charge pumping (CP) current (I/sub cp/) measurements. We have found that radiation-induced oxide-trap(More)
The aim of this paper is to investigate the reliability of thick oxides that are dedicated to the power integrated device fabrication. The field dependence of defect-related time-dependent dielectric breakdown (TDDB) mode over a wide range of oxide thickness T<sub>OX</sub> and electric field E, using multiple wafer fabrication lots, is investigated. TDDB(More)