Borna Obradovic

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—A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal–oxide–semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%,(More)
—A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF 2 , and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are(More)
A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity(More)
— A bio-inspired energy-optimizing control methodology for a formation of rotary-wing Micro Air Vehicles (MAVs) is proposed. The key idea is that the recirculating airflow induced by each vehicle can be used to provide an upward airflow to a neighbor in the formation. The recirculating airflow around each vehicle is modeled using a doublet field, and the(More)
To my wife, my parents and grandparents Acknowledgement First of all, I would like to thank my supervisors and my role models, Drs. Sanjay K. Banerjee and Al F. Tasch for their invaluable guidance and support throughout my four-year Ph.D. study. Many thanks to Drs. for taking their time to serve on my committee, and for their comments and help. Many thanks(More)
Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations. These models provide the required as-implanted impurity(More)
Ion implantation is a critical technology in semiconductor Ultra Large Scale Integration (ULSI). Binary collision approximation (BCA)-based Monte Carlo (MC) ion implantation simulators are commonly used to predict the impurity and damage profiles. A deterministic propagator is needed in these simulators to simulate the propagation of ions in crystalline(More)
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