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Neuromorphic systems recently gained increasing attention for their high computation efficiency. Many designs have been proposed and realized with traditional CMOS technology or emerging devices. In this work, we proposed a spiking neuromorphic design built on resistive crossbar structures and implemented with IBM 130nm technology. Our design adopts a rate(More)
As manufacture process scales down rapidly, the design of <i>ternary content-addressable memory</i> (TCAM) requiring high storage density, fast access speed and low power consumption becomes very challenging. In recent years, many novel TCAM designs have been inspired by the research on emerging nonvolatile memory technologies, such as <i>magnetic tunneling(More)
In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM(More)
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