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This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 μm GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of -17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are -47.9, -34.8 and -27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are +7(More)
GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si 3 N 4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of(More)
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