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— This paper deals with the design and synthesis of active circuits that produce simultaneously negative group delay and gain at microwave frequencies or for baseband signals. For a single cell, analytical equations show that the proposed topology meets these objectives while also satisfying active device requirements. Then, a synthesis approach is(More)
—In this letter, we report on the design, simulation and implementation of an active negative group delay circuit that operates at 1 GHz with a group delay and a gain, respectively, around 2 ns and 2 dB. Analytical formulas are proposed to demonstrate that the adopted topology is able to simultaneously achieve negative group delay (NGD) and gain while(More)
—This paper is devoted on the characterization method of RF/digital PCB interconnections for the prediction of the high-speed signal transient responses. The introduced method is based on the use of the interconnection line RLCG-model. Theoretical formulae enabling the extraction of the electrical per-unit length parameters R, L, C and G in function of the(More)
In this paper, we propose a technique to compensate the propagation delay and losses in VLSI interconnects by using negative group delay (NGD) active circuits. This study uses the RLC models of interconnect lines currently considered in VLSI circuits. The circuit proposed here is based on a cell consisting of a Field Effect Transistor (FET) in parallel with(More)
– This paper proposes and describes in details the synthesis, design and implementation of two different active topologies exhibiting negative group delay (NGD) in different frequency bands. With the first of them, gain and NGD in microwave frequency band are simultaneously achieved; the basic cell consists in a field effect transistor (FET) cascaded with a(More)
This paper presents a new method developed to reduce the propagation delay by using a negative group delay (NGD) active circuit. Analytical expressions are proposed to demonstrate the validity of our approach in the case of an RC-transmission line model. The synthesis method of NGD circuits versus the line length is detailed. For a 0.5 Gbit/s digital signal(More)
—In this paper, a broadband balun using an active circuit with negative group delay (NGD) is proposed. The unit cell of the active NGD circuit is based on a Field Effect Transistor (FET) in cascade with an RLC series network. First, a comparison between measurements of a two-stage prototype of this active topology and simulations validate the synthesis(More)