Björn Agnarsson

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This Licentiate thesis summarizes the work carried out by the author the years 2004 to 2008 at the University of Iceland and the Royal Institute of Technology (KTH) in Sweden. The aim of the project was to investigate the structure of sapphire (?-Al2O3) surfaces, both for pure scientific reasons and also for potential use as substrate for GaN-growth by(More)
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