Bing-Fang Hung

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This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series(More)
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