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In this paper, a new concept of normally-off HEMT is proposed: it uses for the first time the implantation of Fluorine ions in the GaN layer below the AlGaN/GaN interface rather than in the AlGaN layer. Simulation results show that the proposed method is more effective when it comes to the Fluorine concentration required to achieve normally-off operation.
A new normally-off Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) is proposed. The design is based on the implantation of fluorine ions in the GaN layer below the gate electrode under the AlGaN/GaN interface. Sensitivity analyses are carried out, showing the effects of the fluorine concentration and the thickness of the insulator(More)
Modifying the mass contour with liposuction by developing numerous subcutaneous "tunnels" with subsequent homogeneous contractions of the overlying skin will add a new dimension to the treatment of the Launois-Bensaude syndrome. Successful correction of these deformities can be obtained without a large amount of surgical undermining and skin resection and(More)
Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed technique is capable of shifting the threshold voltage to positive values, making the HEMT normally-off. To address the(More)
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