Bernhard H. Seiß

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Sorry, we do not have enough data to show an influence graph for this author.
Learn More
In these experiments 19 nm of Si<sub>0.73</sub>Ge<sub>0.27</sub> (SiGe) have been deposited by CVD on patterned (001) Si wafers. The patterns are oriented either along &lt;;100&gt;; or along &lt;;110&gt;; directions in order to obtain information on anisotropic effects.The epitaxial SiGe has been annealed one minute under H<sub>2</sub> atmosphere at(More)
  • 1