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Scalable quantum computing architectures with electronic spin qubits hosted by arrays of single phosphorus donors in silicon require local electric and magnetic field control of individual qubits separated by ∼10 nm. This daunting task not only requires atomic-scale accuracy of single P donor positioning to control interqubit exchange interaction but also(More)
Electron spins confined to phosphorus donors in silicon are promising candidates as qubits because of their long coherence times, exceeding seconds in isotopically purified bulk silicon. With the recent demonstrations of initialization, readout and coherent manipulation of individual donor electron spins, the next challenge towards the realization of a Si:P(More)
Different approaches have been proposed to link high cycle fatigue properties to thermal measurements under cyclic loadings, usually referred to as " self-heating tests. " This paper focuses on two models whose parameters are tuned by resorting to self-heating tests and then used to predict high cycle fatigue properties. The first model is based upon a(More)
Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors, where a single P atom has been placed inside a transistor architecture with atomic precision accuracy. Despite the dimensions of the critical parts of(More)
The atomically precise doping of silicon with phosphorus (Si:P) using scanning tunneling microscopy (STM) promises ultimate miniaturization of field effect transistors. The one-dimensional (1D) Si:P nanowires are of particular interest, retaining exceptional conductivity down to the atomic scale, and are predicted as interconnects for a scalable(More)
The recent observation of ultralow resistivity in highly doped, atomic-scale silicon wires has sparked interest in what limits conduction in these quasi-1D systems. Here we present electron transport measurements of gated Si:P wires of widths 4.6 and 1.5 nm. At 4.6 nm we find an electron mobility, μ(el)≃60  cm²/V s, in excellent agreement with that of(More)
Metallic property and Ohmic conduction in densely phosphorus &#x03B4;-doping ultra-thin silicon nanowires (Si:P NWs) are studied. A 10-band sp<sup>3</sup> d<sup>5</sup> s* tight-binding approach is used to describe device electronic structures atomistically. Electrostatics at equilibrium are self-consistently calculated with our in-house 3-D parallel(More)
We demonstrate serial electron transport through a donor-based triple quantum dot in silicon fabricated with nanoscale precision by scanning tunnelling microscopy lithography. From an equivalent circuit model, we calculate the electrochemical potentials of the dots allowing us to identify ground and excited states in finite bias transport. Significantly, we(More)
Heterogeneous dissipation in steel sheets due to cyclic loading is difficult to measure, especially in the transverse direction because of the high conductivity and low thickness of the sheets. The goal of this article is thus to develop an experimental protocol allowing for the dissipation field determination from infra-red thermography. The protocol is(More)
Few-layer black phosphorous (BP) has emerged as a promising candidate for next-generation nanophotonic and nanoelectronic devices. However, rapid ambient degradation of mechanically exfoliated BP poses challenges in its practical deployment in scalable devices. To date, the strategies employed to protect BP have relied upon preventing its exposure to(More)