Learn More
A 3Mega-Pixel back illuminated image sensor in 1T5 architecture and 1.45µm pixel pitch has been successfully developed and characterized. A high quantum efficiency over 60% in the visible light spectrum and a low dark current of 1e-/s at 25°C have been achieved due to dedicated frontside and backside process steps such as antireflective layer adaptation, p(More)
  • 1