Benju Wang

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GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si 3 N 4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of(More)
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