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Journals and Conferences
This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate… (More)
We report two uni-traveling-carrier photodiode (PD) structures, for high-power and high-linearity applications. Using a thick collection layer (500 nm), the fabricated 25-m-diameter PDs achieve a… (More)
Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 /spl mu/m were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of… (More)
We present an evanescent waveguide InGaAs/InGaAsP UTC PD with respectively a bandwidth ≫ 50 GHz, a responsivity of 0.55 A/W and an IP3 of 19.7 dBm at 10 mA and 20 GHz.
We have fabricated and characterized two high-power high-linearity uni-traveling-carrier photodiode (UTC-PD) structures. The UTC performances are compared regarding their respective collector design.… (More)
The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping… (More)
We investigate the devices performances of InAs/InP (100) quantum dash buried stripe ridge lasers. We demonstrate high-gain quantum dash based lasers whose dynamic properties are compatible with… (More)
Electrical spectrum line-width is reduced in mode-locked FP 1.55 μm-QD laser diode through optical confinement factor optimization. From optimized structures, we obtained nearly Fourier-transform… (More)
Static and dynamic properties of InP-based Quantum Dashes of 1.55µm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above… (More)
Polarisation insensitive injection locking of two-section Fabry-Perot laser diodes is demonstrated, allowing to achieve error free transmission through 50 km over 20 nm at 2.5 Gb/s.