Benjamin Munstermann

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The large signal behaviour of resonant tunnelling diodes (RTD) in K-band oscillators is investigated in order to optimize the RF-output power of RTD-based voltage controlled oscillators. Circuit simulations based on a scaleable large-signal RTD model are presented and different approaches to increase the RF-power are proposed. A new differential(More)
We present an asymmetrical InP-based three barrier resonant tunneling diode with high current density. For positive bias voltages the device operates like a symmetrical resonant tunneling diode, providing a wide region of negative differential resistance. Under zero bias condition it can be used as a sensitive high frequency detector. The nonlinearity may(More)
Today, nanowire devices are referred to as a qualified successor of CMOS electronics. Both a performance superior to silicon (Si) MOSFETs and a rational, cost-efficient technique to implement multiple nanowire devices into circuits are recommended. We propose to transfer the nanowires from a growth substrate onto a carrier or host substrate using(More)
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