Benjamin J. Blalock

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This paper addresses the difficulty of designing 1-V capable analog circuits in standard digital complementary metal–oxide–semiconductor (CMOS) technology. Design techniques for facilitating 1-V operation are discussed and 1-V analog building block circuits are presented. Most of these circuits use the bulk-driving technique to circumvent the metal–(More)
This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complementary metal-oxide-semiconductor (CMOS) integrated circuit for neural signal preamplification, filtering,(More)
The low power losses of silicon carbide (SiC) devices provide new opportunities to implement an ultra high-efficiency front-end rectifier for data center power supplies based on a 400-V<sub>dc</sub> power distribution architecture, which requires high conversion efficiency in each power conversion stage. This paper presents a 7.5-kW high-efficiency(More)
In high power applications of silicon carbide (SiC) MOSFETs where parallelism is employed, current unbalance can occur and affect the performance and reliability of the power devices. In this paper, factors which cause current unbalance in these devices are analyzed. Among them, the threshold voltage mismatch is identified as a major factor for dynamic(More)
The G<sup>4</sup>-FET, a four-gate transistor compatible with standard silicon-on-insulator (SOI) CMOS technology, provides unique opportunities as a logic device. Combining both JFET- and MOSFET-like actions within one transistor body, the G<sup>4</sup>-FET offers two side (lateral) junction-based gates, a top MOS gate, and a MOS back gate that is(More)
This paper presents a new active overcurrent protection scheme for IGBT modules based on the evaluation of fault current level by measuring the induced voltage across the stray inductance between the Kelvin emitter and power emitter of IGBT modules. Compared with the commonly used desaturation protection, it provides a fast and reliable detection of fault(More)