Errata p. 6, Section 1.3, first sentence should read: The idea of metal-oxide-semiconductor ...
—The unlicensed band around 60 GHz can be utilized for wireless communications at data rates of several gigabits per second. This paper describes a receiver front-end that incorporates a folded microstrip geometry to create resonance at 60 GHz in a common-gate LNA and active mixers. Realized in 0.13-m CMOS technology, the receiver front-end provides a… (More)
— This paper presents a study of phase noise in two inductorless CMOS oscillators. First-order analysis of a linear oscillatory system leads to a noise shaping function and a new definition of Q. A linear model of CMOS ring oscillators is used to calculate their phase noise, and three phase noise phenomena, namely, additive noise, high-frequency… (More)
—Injection locking characteristics of oscillators are derived and a graphical analysis is presented that describes injection pulling in time and frequency domains. An identity obtained from phase and envelope equations is used to express the requisite os-cillator nonlinearity and interpret phase noise reduction. The behavior of phase-locked oscillators… (More)
—A 10-Gb/s phase-locked clock and data recovery circuit incorporates an interpolating voltage-controlled oscillator and a half-rate phase detector. The phase detector provides a linear characteristic while retiming and demultiplexing the data with no systematic phase offset. Fabricated in a 0.18-m CMOS technology in an area of 1 1 0 9 mm 2 , the circuit… (More)
This paper describes precision techniques for the design of comparators used in high-performance analog-to-dig-ita1 converters employing parallel conversion stages. Following a review of conventional offset cancellation techniques, circuit designs achieving 12-b resolution in both BiCMOS and CMOS 5-V technologies are presented. The BiCMOS comparator… (More)
—A triple-resonance network increases the band-width of cascaded differential pairs by a factor of 2 3, yielding a 40-Gb/s CMOS amplifier with a gain of 15 dB and a power dissi-pation of 190 mW from a 2.2-V supply. An ESD protection circuit employs negative capacitance along with T-coils and pn junctions to operate at 40 Gb/s while tolerating 700–800 V.
—A large-signal piecewise-linear model is proposed for bang-bang phase detectors that predicts characteristics of clock and data recovery circuits such as jitter transfer, jitter tolerance, and jitter generation. The results are validated by 1-Gb/s and 10-Gb/s CMOS prototypes using an Alexander phase detector and an LC oscillator.
—A pipelined ADC incorporates a blind LMS calibration algorithm to correct for capacitor mismatches, residue gain error, and op amp nonlinearity. The calibration applies 128 levels and their perturbed values, computing 128 local errors across the input range and driving the mean square of these errors to zero. Fabricated in 90-nm digital CMOS technology,… (More)
—A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also… (More)