We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered… (More)
To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts.… (More)
Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron… (More)
Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the… (More)
A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides… (More)
The atomic layer deposition (ALD) process of hydrogen-doped indium oxide (In2O3:H) using indium cyclopentadienyl (InCp) and both O2 and H2O as precursors is highly promising for the preparation of… (More)
To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure… (More)
The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for… (More)
In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al<sub>2</sub>O<sub>3</sub>-based surface passivation layers for c-Si homojunction cells. In… (More)
Surface passivation of Si nanocrystals (NCs) is necessary to enable their utilization in novel photovoltaic and optoelectronic devices. Herein, we report the surface passivation of… (More)