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Journals and Conferences
Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO2/poly-gate technology, where PBTI is negligible.… (More)
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.
Ring Oscillators (RO) have traditionally been utilized to assess the effect NBTI transistor degradation on operating frequency. RO stress results are difficult to interpret for technologies with metal gates and high-k dielectrics, since the circuit degrades from both NBTI in PFETs and PBTI in NFETs. We have successfully designed and tested specialized… (More)