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Current densities ranging from 440 to 543 kA/cm were applied to InGaP HBTs in WLR tests. Even with such a high current stress at 440 kA/cm and an estimated junction temperature of 396 °C, the transistor lasted for 101 hours before our failure criterion was met. The current gain degradation behavior was similar to that shown in traditional, low current(More)
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different(More)
This paper reports on a 27.5 dBm wide band high efficiency InGaP/GaAs HBT two stage module operating at 1805 to 2170MHz for LTE small cell base station carrier aggregation applications. It uses a high linearity, low thermal resistance HBT flip chip process developed by Qorvo. The Psat of this device reaches 35dBm, with a gain of around 31dB, and a PAE of(More)
Nonlinear HBT models are presented for 15W power amplifiers with superior back-off linearity. Each amplifier consists of 8 Building Blocks of 28V InGaP/GaAs HBT. The P1dB is 42dBm. The models are based on the AHBT model for the Building Block (1BB) reported previously. The model for the amplifier at 2.14GHz is scaled from the AHBT model for 1BB whereas the(More)
This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of(More)
An accurate non-linear large signal model is developed for GaAs E-pHEMT by revising the Verilog-A source code of the Angelov (Chalmers) model. The model is scalable and the scaling is fully verified by DC, thermal, capacitances, and S-parameters under multiple bias conditions. Excellent agreement between the simulation and measurement has been achieved for(More)
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