Baoshun Zhang

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High-performance enhancement-mode AlGaN/GaN HEMTs (E-HEMTs) were demonstrated with samples grown on a low-cost silicon substrate for the first time. The fabrication process is based on a fluoride-based plasma treatment of the gate region and postgate annealing at 450 /spl deg/C. The fabricated E-HEMTs have nearly the same peak transconductance (G/sub m/)(More)
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