Baoling Huang

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We isolated a novel strain D5 from nodules of Acacia confusa. Under strict sterile conditions the strain could successfully nodulate Acacia confusa, A. crassicarpa and A. mangium, with nitrogenase activity ranging from 18.90 to 19.86 nmol·g(-1)·min(-1). In the phylogenetic tree based on a complete 16S rRNA gene sequence, the sequence of strain D5 shared 99%(More)
Bi2Te3 and Sb2Te3 films Baoling Huang, Chris Lawrence, Andrew Gross, Gi-Suk Hwang, Niloufar Ghafouri, Sang-Woo Lee, Hanseup Kim, Chang-Peng Li, Ctirad Uher, Khalil Najafi, and Massoud Kaviany Department of Mechanical Engineering, University of Michigan, Michigan 48109, USA Department of Physics, University of Michigan, Michigan 48109, USA Department of(More)
Single-crystalline Si-based nanocomposites have become promising candidates for thermoelectric applications due to their prominent merits. Reducing the thermal conductivity κ without deteriorating the electrical properties is the key to improve their performance. Through non-equilibrium molecular dynamics simulations, we show that κ of single-crystalline(More)
Symbiotic nitrogen fixation of rhizobia and leguminous plants is considered as the most important biologic nitrogen fixation system on earth. Symbiotic nodulation of gymnosperm Podocarpus macrophyllus and rhizobia has never been reported. In this study, 11 endophytic bacteria strains were isolated from root nodules of P. macrophyllus and its variation P.(More)
Phonons in low-dimensional structures with feature sizes on the order of the phonon wavelength may be coherently scattered by the boundary. This may give rise to a new regime of heat conduction, which can impact thermal energy transport and conversion. Traditional methods used to investigate phonon transport in one-dimensional structures suffer from(More)
MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric(More)
We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of(More)
We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from(More)
Using the Boltzmann-Peierls equation for phonon transport approach with the inputs of interatomic force constants from the self-consistent charge density functional tight binding method, we calculate the room-temperature in-plane lattice thermal conductivities k of multilayer graphene (up to four layers) and graphite under different isotropic tensile(More)
IC A IO N Due to the compatibility with large-area fabrication techniques and low fabrication costs involved, organic transistors have been actively researched and various kinds of chemical or physical sensors based on organics transistors have been developed. These sensors can be used for the detection of moisture, [ 1 ] glucose, [ 2 ] pressure, [ 3 , 4 ](More)