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Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic(More)
Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric,(More)
In this work, we report a feasible compact solution to enhance the dynamic performance of GaN-on-Si power devices by integrating a photon source into the drain terminal of a heterojunction field-effect transistor (FET). Photons can be generated from the photonic-ohmic drain (POD) synchronously with turning on of the channel current. These on-chip generated(More)
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