Claim Your Author Page
Ensure your research is discoverable on Semantic Scholar. Claiming your author page allows you to personalize the information displayed and manage publications.
For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive… (More)
This paper presents for the first time (110) PMOS characteristics without R<sub>ext</sub> degradation, allowing investigation of fundamental mobility and demonstration of drive current I<sub>on</sub>… (More)
This work demonstrates that the ~2times mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190 nm liners poly-pitch for devices under compressive stress. (110) PMOS with 3.5 GPa… (More)
We report a successful implementation of epitaxially grown Phosphorus-doped (P-doped) embedded SiC stressors into SOI nMOSFETs. We identify a process integration scheme that best preserves the SiC… (More)