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ON THE DESIGN OF NEW CMOS DO-OTA TOPOLOGIES PROVIDING HIGH OUTPUT IMPEDANCE AND EXTENDED LINEARITY RANGE
ON THE DESIGN OF NEW CMOS DO-OTA TOPOLOGIES PROVIDING HIGH OUTPUT IMPEDANCE AND EXTENDED LINEARITY RANGE
An industrial 0.35 /spl mu/m SiGe BiCMOS technology for 5 GHz WLAN featuring an improved selective epitaxial growth process
A SiGe BiCMOS process with a double-polysilicon self-aligned Heterojunction Bipolar Transistor (HBT) fabricated by means of selective epitaxy has been developed. The selective epitaxial growth isExpand