III/V-on-lithium niobate amplifiers and lasers
- C. O. D. Beeck, Felix M. Mayor, B. Kuyken
- 27 August 2021
Materials Science
Optica
We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability.
Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing
- C. Op de Beeck, B. Haq, B. Kuyken
- 24 April 2020
Physics
Optica
The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when…
Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers
- B. Haq, S. Kumari, G. Roelkens
- 8 June 2020
Physics
Laser & Photonics reviews
The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays…
III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
- Jing Zhang, G. Muliuk, G. Roelkens
- 4 November 2019
Physics
APL Photonics
A promising technology, micro-transfer-printing (μTP), is discussed, which can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs.
Ultra-Dense III-V-on-Silicon Nitride Frequency Comb Laser
- S. Cuyvers, B. Haq, B. Kuyken
- 1 December 2020
Physics
European Conference on Optical Communication
A heterogeneously integrated III-V-on-silicon nitride mode-locked laser is demonstrated. The device is fabricated by microtransfer printing an InP/InAlGaAs-based multiple-quantum-well coupon. A dense…
Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser.
- Jing Zhang, B. Haq, G. Roelkens
- 2 April 2018
Physics
Optics Express
An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 μm2 III-V coupon, defined on aIII-V epitaxial wafer, allowing for the very efficient use of the III- V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer.
Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser
- S. Cuyvers, B. Haq, B. Kuyken
- 2 June 2021
Physics
Laser & Photonics reviews
Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode‐locked diode lasers…
Widely Tunable III–V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared
- Ruijun Wang, B. Haq, G. Roelkens
- 24 June 2019
Physics
IEEE Journal of Selected Topics in Quantum…
Integrating III–V gain material with silicon photonic integrated circuits enables the realization of advanced laser sources and full integrated systems for optical communication and sensing…
Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers.
- B. Haq, Javad Rahimi Vaskasi, G. Roelkens
- 26 October 2020
Physics
Optics Express
Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow.
IlI-V/Si PICs Based on Micro-Transfer-Printing
- G. Roelkens, Jing Zhang, R. Baets
- 3 March 2019
Physics
Optical Fiber Communications Conference and…
An alignment-tolerant interface for evanescently-coupled devices is proposed enabling III-V/Si heterogeneously integrated PICs using micro-transfer-printing.
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