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III/V-on-lithium niobate amplifiers and lasers

We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability.
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Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when…
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Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers

The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays…
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III-V-on-Si photonic integrated circuits realized using micro-transfer-printing

A promising technology, micro-transfer-printing (μTP), is discussed, which can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs.
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Ultra-Dense III-V-on-Silicon Nitride Frequency Comb Laser

A heterogeneously integrated III-V-on-silicon nitride mode-locked laser is demonstrated. The device is fabricated by microtransfer printing an InP/InAlGaAs-based multiple-quantum-well coupon. A dense…
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Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser.

An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 × 970 μm2 III-V coupon, defined on aIII-V epitaxial wafer, allowing for the very efficient use of the III- V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer.
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Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode‐locked diode lasers…
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Widely Tunable III–V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared

Integrating III–V gain material with silicon photonic integrated circuits enables the realization of advanced laser sources and full integrated systems for optical communication and sensing…
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Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers.

Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow.
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IlI-V/Si PICs Based on Micro-Transfer-Printing

An alignment-tolerant interface for evanescently-coupled devices is proposed enabling III-V/Si heterogeneously integrated PICs using micro-transfer-printing.
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