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Magnetoresistive Random Access Memory
In this paper, a review of the developments in MRAM technology over the past 20 years is presented. Expand
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Creep and flow regimes of magnetic domain-wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy.
We report on magnetic domain-wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The completeExpand
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Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions
Spin-transfer torque allows the magnetization of nanopillar devices to be switched electrically. Incorporating asymmetries into the design of such a device generates a linear out-of-plane torqueExpand
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First-principles investigation of the very large perpendicular magnetic anisotropy at Fe|MgO and Co|MgO interfaces
The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work veryExpand
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Abstract A comprehensive review of giant magnetoresistance in spin-valve sandwiches and multilayers is presented, highlighting the experimental and theoretical results which are of particularExpand
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Amplitude and phase noise of magnetic tunnel junction oscillators
The microwave emission linewidth of spin transfer torque nano-oscillators is closely related to their phase and amplitude noise that can be extracted from the magnetoresistive voltage signal V(t)Expand
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Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-CMOS design
A macro-model of magnetic tunnel junction (MTJ) is presented in this paper. Expand
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Electrical Modeling of Stochastic Spin Transfer Torque Writing in Magnetic Tunnel Junctions for Memory and Logic Applications
Magnetic tunnel junctions (MTJ) are considered as one of the most promising candidates for the next generation of nonvolatile memories and programmable logic chips. Spin transfer torque (STT) inExpand
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Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions
A thermally assisted writing procedure is proposed in a tunnel junction based magnetic random access memory cell. The magnetic layers of the tunnel junction are both exchange-biased withExpand
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Spin-torque oscillator using a perpendicular polarizer and a planar free layer.
Spintronics materials have recently been considered for radio-frequency devices such as oscillators by exploiting the transfer of spin angular momentum between a spin-polarized electrical current andExpand
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