Highly Influential Citations2
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A self aligned complementary GaAs (CGaAs) technology has been developed for low-power, high-speed digital and mixed-mode applications. Previous work has described the low voltage (0.9 to 1.5 V) and… Continue Reading
The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel… Continue Reading
A self-aligned complementary GaAs (CGaAs) technology (developed at Motorola) for low-power, portable, digital and mixed-mode circuits is being extended to address high-speed VLSI circuit… Continue Reading
A GaAs numerically controlled oscillator (NCO) has been designed and fabricated in 1- mu m GaAs E/D MESFET direct-coupled FET logic (DCFL). The NCO has been designed for spaceborne applications… Continue Reading
A self-aligned complementary GaAs (CGaAs) technology has been developed for low-power, high-speed digital and mixed-mode applications. A single process flow has been used to build low-voltage,… Continue Reading