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This work presents the study of MOVPE growth of Zn-5-doped GaAs epilayers. A basic 5-doping procedure "purge-doping-purge" was applied The influence of the growth temperature, zinc concentration in gas phase and c5-doping lime on the density and spatial distribution oj holes was investigated The electrical and optical properties of the test structures were(More)
Deep Level Transient Fourier Spectroscopy study of charge carrier emission from quantum wells and electrically active defects in triple quantum well InGaAsN/GaAs heterostructures is discussed. Main attention is focused on the comparison and evaluation of measured spectra and to state the conditions of quantum well charge carrier emission identification. The(More)
This paper highlights the deep level transient spectroscopy investigation of the triple quantum well InGaAsN/GaAs and InGaAs/GaAs heterostructures grown by atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The main differences of these typical triple quantum well structures are: nitrogen concentration in(More)
Nitrogen incorporation into GaAs epilayers has received interest especially due to band gap decreasing of resultant material. Small fraction of nitrogen makes GaAs<sub>1-x</sub>N<sub>x</sub> useful material for optoelectronic devices grown on GaAs substrates. However, achieving high quality of GaAs<sub>1-x</sub>N<sub>x</sub>/GaAs heterostructures requires(More)
In this paper authors are presenting the first results of electrically active defect investigations in the three 5&#x00D7;UD-In<sub>0.53</sub>Ga<sub>0.47</sub>As/Al<sub>0.42</sub>In<sub>0.58</sub>As MQW structures grown on n-InP:S substrates by low pressure metal organic vapour phase epitaxy at same growth conditions but at different growth rates. The(More)
This work presents the epitaxial growth of undoped multiple quantum well (MQW) - 3 &#x00D7; In<sub>y</sub>Ga<sub>1-y</sub>As<sub>1-x</sub>N<sub>x</sub>/GaAs - structures obtained by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE). The relations between the hydrogen flow rate through the bubblers with TBHy, TMGa, TMIn and the composition of(More)
This work presents electrical and optical properties of Schottky barrier photodetectors containing the triple quantum well (MQW) InGaAsN/GaAs structures grown by atmospheric pressure metal organic vapour phase epitaxy. The peaks corresponding to optical transitions in MQW were identified by photocurrent spectroscopy and compared with simulations. The(More)
The advanced growth technologies enable the growth of heterostructures such as quantum wells CQW) where low dimensional structures, two-dimensional electron gas (2DEG) is formed [1]. In QW the energy levels of free carriers are quantized and the optical transitions can be exactly defined and these evocate unique properties of optoelectronic devices. For(More)
The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using(More)