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The effects of shape and the surface area of cathode support structure on the field emission properties of carbon nanotube cathodes are investigated and quantified in this paper. This study demonstrates that the overall structural geometry, specifically the area of the cathode support structure, plays a significant role and should be considered in the(More)
In this paper we outline a process for the integration of gated CPAs. The process employed to fabricate this gated cathode is highly scaleable and promises the realization of stable high current cold cathodes with low turn-on voltages for many potential applications. In addition, we will present data detailing the field emission performance and reliability(More)
This paper reports experimental data for individual multi-walled CNT (MWNT) emitters. For comparison, a thermodynamics-based variational method was used to obtain a closed-form expression for the radial electric field of a spherical cathode. Theoretical data generated from Technology Computer-Aided Design (TCAD) device simulation software is also reported.(More)
In this paper, we present an empirical study of dynamic behavior of an electron source system which incorporates an individual CNT. We propose a representative circuit model that is simple yet particularly valuable for emission current control for each CNT emitter in an array to facilitate high throughput maskless lithography.
Carbon nanotubes (CNTs) are highly desirable for cold field emission applications because of their stable chemical structure, high current density, and low turn-on fields. The individual CNT has been suggested for high-resolution electron microscope applications. Its low electron beam energy spread and source size compared to conventional electron sources,(More)
Carbon nanotube pillar arrays (CPAs) for cold field emission were fabricated using a conventional photolithography process, and the geometry of these arrays was studied and the effect of pillar height on field emission was quantified. Our CPA samples achieved turn-on fields as low as 0.9 V/mum and stable current densities of 10 mA/cm<sup>2</sup> at applied(More)
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