B. P. Gila

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February 2012 January 2012 December 2011 November 2011 October 2011 September 2011 August 2011 July 2011 June 2011 May 2011 April 2011 March 2011 February 2011 January 2011 December 2010 November 2010 October 2010 September 2010 August 2010 July 2010 June 2010 May 2010 April 2010 March 2010 February 2010 January 2010 December 2009 November 2009 October 2009(More)
In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these dielectrics on the nitride semiconductors. The authors review progress in obtaining low interface state(More)
GaN High Electron mobility transistors (HEMTs) were electrically step-stressed under high reverse gate bias conditions. Once a threshold voltage is reached, gate current increases about two orders of magnitude. Though critical voltage was determined to be linear with increasing gate length, electrical simulations show that the maximum electric field was(More)
The characteristics of Pt/GaN Schottky diodes and Sc/sub 2/O/sub 3//AlGaN/GaN metal-oxide semiconductor (MOS) diodes as hydrogen and ethylene gas sensors and of gateless AlGaN/GaN high-electron mobility transistors (HEMTs) as polar liquid sensors are reported. At 25/spl deg/C, a change in forward current of /spl sim/6 mA at a bias of 2 V was obtained in the(More)
The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gatedrain(More)
The low temperature (100/spl deg/C) deposition of Sc/sub 2/O/sub 3/ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5/spl times/100 /spl mu/m/sup 2/ HEMTs for both types of oxide passivation layers. Both Sc/sub 2/O/sub 3/ and MgO produced larger output(More)
Peltier element cooling of ungated AlGaN/GaN high electron mobility transistors (HEMTs) is shown to be an effective method for condensing exhaled breath, enabling the measurement of the pH and glucose of the exhaled breath condensate (EBC). By comparison with standard solutions, the current change measured in the HEMTs with EBC shows that the sensitivity of(More)
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