B. Meyler

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A low effective oxide thickness of $1.45 nm was achieved in HfAlO films deposited by an electron beam gun evap-orator on unheated p-Si substrate. A reduction of the leakage current density from 1 · 10 À4 to 4.5 · 10 À7 A/cm 2 , at an electric field 3 MV/cm, with annealing temperature and a breakdown electric field of 10 MV/cm were demonstrated for ultra(More)
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