B. L. Yang

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This letter reports the subthreshold characteristics of MOS transistors with the novel CeO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> stacked gate dielectric. We found that the top CeO<sub>2</sub> capping layer does not only improve the bulk properties of La<sub>2</sub>O<sub>3</sub> by reducing the oxygen vacancies as a result of the reduction reaction of(More)
The temperature dependence of threshold voltage (VT) and drain-induced barrier lowering (DIBL) characteristics for MOS transistors fabricated with three different threshold voltage technologies are studied. We found that the technique employed to adjust the VT value make the devices to be not well-scaled for short-channel effects for ultra-short devices at(More)
The physics and the effects of aluminium incorporation into lanthanum oxide (La<sub>2</sub>O<sub>3</sub>) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5% ) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and(More)
The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the I<inf>d</inf>-V<inf>d</inf>characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device(More)
The effect of nitrogen implantation on thin lanthanum oxide (La<sub>2</sub>O<sub>3</sub>) films grown by e-beam evaporation are investigated using X-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by plasma immersion ion-implantation (PII) is found(More)
The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capacitance-voltage (C-V) measurements have been conducted on(More)
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