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In this contribution, two main challenges for wafer-to wafer 3D integration are investigated: bonding quality (including wafer-to-wafer alignment) and thermal management. The bonding process considered in this study is direct SiO<sub>2</sub>/SiO<sub>2</sub> hydrophilic bonding. It is shown that, after process optimization, lower than 1.5 mum misalignment(More)
A three-dimensional (3D) wafer-to-wafer integration technology has been developed using face-to-face dielectric wafer bonding, followed by wafer thinning and backside interconnect formation. The key technologies required for this integration include: reliable defect free direct dielectric wafer bonding, precise wafer-to-wafer alignment, backside thinning,(More)
The development of organic complementary circuits has been largely limited by the development of suitable organic n-channel transistors. However, recent advances have led to materials such as the high-mobility air-stable n-channel organic semiconductor, N,N'-bis(n-octyl)-dicyanoperylene-3, 4 : 9, 10-bis(dicarboximide), PDI-8CN<sub>2</sub>. Here, the(More)
In this investigation, synthetic and fabrication approaches to new organic, inorganic, and hybrid materials/devices for flexible/transparent electronic applications are presented. The covered topics are: 1. Utilization of new solution-processable dielectrics exhibiting ultra-high capacitance, low leakage, and high breakdown fields. 2. Development of new(More)
FePt nanoparticles have the potential to extend the data density of magnetic recording beyond 1 Tbit/in<sup>2</sup>. The phase transformation from low anisotropy, face-centered cubic to face-centered tetragonal with high anisotropy is essential and complex. The samples measured in this paper were annealed in a mixture with fine ground (&lt;20 mum) NaCl. The(More)
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