B. Hradsky

  • Citations Per Year
Learn More
This paper reports on the first functional 6V, 4Mb silicon nanocrystal based nonvolatile memory array using conventional 90nm and 0.25/spl mu/m process technologies. The silicon nanocrystal based NOR Flash can be programmed and erased using conventional techniques in floating gate memories. Key aspects of this technology are the ability to form nanocrystals(More)
  • 1