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The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K(More)
—A self-aligned complementary GaAs (CGaAs TM) technology developed at Motorola for low-power, portable, digital and mixed-mode circuits is being extended to address high-speed VLSI circuit applications. The process supports full complementary , unipolar (pseudo-DCFL), source-coupled, and dynamic (domino) logic families. Though this technology is not yet(More)
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