Avirup Dasgupta

  • Citations Per Year
Learn More
This work presents new compact models that capture advanced physical effects presented in industry FinFETs. The presented models are introduced into the industry standard compact model BSIM-CMG. The core model is updated with a new unified FinFET model, which calculates charges and currents of transistors with complex fin cross-sections. In addition,(More)
In this paper we present a model to capture the effect of the body-bias on the overlap capacitances. The main hurdle while introducing body-bias dependence in gate-source and gate-drain overlap capacitances is maintaining reciprocity for all capacitances. We propose a subcircuit approach to help maintain reciprocity while including body-bias dependence in(More)
In this paper, we present an analytical charge-based model for thermal noise power spectral density in fully depleted silicon on insulator (FDSOI) MOSFETs. Two important aspects particular to FDSOI technology, namely, different inversion charges and different effective mobilities at front and back interfaces, are considered in the model. Proposed model is(More)
In this paper we present a model for the Flicker noise in quasi-ballistic transistors based on our improved core transport model. The model is validated with DC and noise measurements for an InGaAs nanowire FET and a Carbon nano-tube FET. The noise model, along with the core is valid from drift-diffusive to quasi-ballistic regimes of operation.
  • 1