Aurélien Olivier

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In this paper, we present a first full set of characteristics (dc, f<sub>T</sub>, f<sub>max</sub>, and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement(More)
A carrier device has been developed for use with a sterotaxic apparatus. It can be attached to the OBT frame or to any Leksell-type frame. With this carrier, intracranial insertion of commercially available depth electrodes with built-in connectors is possible. By using two different heads mounted on a single carrier, the surgeon can perform a(More)
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