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Evaluation of Through Silicon Via (TSV) electrical performance is hardly required today to improve heterogeneous 3D chip performance in the frame of a " more than Moore " approach. Accurate modeling of TSV is consequently essential to perform design optimizations and process tuning. This paper proposes a methodology based on RF characterizations and(More)
We report the modification and characterization of single-walled carbon nanotubes (SWCNTs) in view of molecular sensing applications. We found that ultrasonicated SWCNTs present sticking properties that make them adhere on electrode surfaces. This allows excellent characterization of SWCNTs by cyclic voltammetry (CV) before and after chemical(More)
Metallic conductive nanowires (NWs) with DNA bundle core are achieved, thanks to an original process relying on double-stranded DNA alignment and physical vapor deposition (PVD) metallization steps involving a silicon substrate. First, bundles of DNA are suspended with a repeatable process between 2 µm high parallel electrodes with separating gaps ranging(More)
Deterministic lateral displacement (DLD) devices enable to separate nanometer to micrometer-sized particles around a cutoff diameter, during their transport through a microfluidic channel with slanted rows of pillars. In order to design appropriate DLD geometries for specific separation sizes, robust models are required to anticipate the value of the cutoff(More)
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